Journal of Nanoscience and Nanoengineering
Articles Information
Journal of Nanoscience and Nanoengineering, Vol.4, No.2, Jun. 2018, Pub. Date: Jun. 14, 2018
Structural and Dielectric Properties of Mn Doped BiFeO3
Pages: 9-16 Views: 1509 Downloads: 630
Authors
[01] Katrapally Vijaya Kumar, Department of Physics, JNTUH College of Engineering Sultanpur, Pulkal (M), Sangareddy, India.
[02] Voora Srinivas, Department of Physics, Government Institute of Electronics, Secunderabad, India.
[03] Anupati Telugu Raghavender, Department of Electronics and Communication Engineering, Nishitha College of Engineering and Technology, Hyderabad, India; Abhigyaan Labs Private Limited, Hyderabad, India.
Abstract
Polycrystalline Bi1-xMnxFeO3(x=0.0, 0.1, 0.2, 0.3) were synthesized using sol-gel method to study the structural and dielectrical properties. Raman analysis confirmed the rhombohedral structure (3Rc) in all the prepared samples. Raman measurements were carried in both parallel and crossed polarization configuration. In dielectric studies, dielectric constant (both ε’ and ε”) and dielectric loss were observed to decrease with increasing frequency (100Hz to 1MHz) at room temperature. Dielectric constant and dielectric loss increases with increases in temperature. Leakage current density was observed to increase with increasing Mn doping concentration.
Keywords
Multiferroic Material, Structural Properties, Dielectric Properties, Leakage Current
References
[01] B Bhushan, A Basumallick, S K Bandopadhyay, N Y Vasanthacharya and D Das, J. Phys. D. Appl. Phys., 42, 065004 (2009).
[02] Mfiebig, TLottermoser, D Frohlich, A V Goltsev and R VPisarev, Nature, 419, 818 (2002).
[03] WEerenstein, N D Mathur and J F Scott, Nature, 442, 759 (2006).
[04] Y Satio, H Takao, T Tani, TNonoyama, K Takatori, T Homma, T Nagaya and M Nakamura, Nature, 432, 84 (2004).
[05] M MKumar, V R Palkar, K Srinivas and S V Suryanarayana, Appl. Phys. Lett., 76, 2764 (2000).
[06] J V Rivera and H Schmid, Ferroelectrics, 204, 23 (1997).
[07] M Fiebig, J. Phys. D. Appl. Phys., 38, R123 (2005).
[08] N. A. Hill, J. Phys. Chem., B104, 6694 (2000).
[09] K. Takahashi, N. Kida and M. Tonouchi, Phys. Rev. Lett., 96, 117402 (2006).
[10] Zuci Quan, wei Liu, Hao Hu, Sheng Xu, Bobby Sebo, Guojia Fang, Meiya Li, and Xingzhoong Zhao, J. Appl. Phys., 104, 084106, (2008).
[11] C. Ederer and N. A. Spaldin, Phys. Rev. B., 71, 060401, (2005).
[12] X. Qi, J. Dho, R. Tomov, M. G. Blamire, J. L. Mac-Manus-Drisol, Appl. Phys. Lett., 86, 062903 (2005).
[13] Deepti Kothari, V. Raghavendra Reddy, V. G. sathe, Ajay Gupta, A. Banerjee, A. M. Awasthi, J. Magn. Magn. Mater., 320, 548 (2008).
[14] H. Fukumura, H. Harima, K. Kisoda, M. Tamada, Y. Noguchi, M. Miyayama, J. Magn. Magn. Mater., 310, e367 (2007).
[15] R. Haumont, J. Kreisel, P. Bouvier, F. Hippert, Phys. Rev. B., 73, 132101, (2006).
[16] A. Lahmar, S. Habouti, C. H. Solterbeck, M. Es-Souni and B. Elouadi, J. Appl. Phys., 105, 014111 (2009).
[17] T Y Kim, N H Hong, T Sugawara, A T Raghavender, and M Kurisu, J. Phys: Cond. Mat, 25, 206003 (2013).
[18] A. T. Raghavender, N. H. Hong, C. Park, M.-H. Jung, K. J. Lee, and D. Lee, Materials Lett., 65, 2786 (2011).
[19] A. T. Raghavender and N. H. Hong, J. Magnetics, 16, 19 (2011).
[20] V. Srinivas, A. T. Raghavender, and K. Vijaya Kumar, 2016, 4835328, (2016).
[21] Pawan Kumar, Manoranjan Kar, Materials Chem. and Phys., 148, 968 (2014).
[22] Dinesh varshney, Ashwini Kumar, Kavitha Verma, Journal of Alloys and Compounds 509, 8421 (2011).
[23] S K Singh, H Ishiwara and maruyama, Appl. Phys. Lett. 88, 262908 (2006).
[24] Pragna Pandit, S Satapathy, Poorva Sharma, P K Gupta, S M Yusuf and V G Sathe, Bulletin of Materials Science 34, 899 (2011).
[25] Ji-Zhou Huang, Yang Shen, Ming Li, and Ce-Wen Nan, J. Appl. Phys, 10, 094106, (2011).
[26] . S. B. Narang, I. S. Hudiara, J. Cer. Processing Research 7, 113, (2006).
[27] S. F. Mansour, Egyptian Journal of Solids 2, 263,(2005).
[28] M. Chanda, Science of Engineering Materials, The Machmillan Company of India Ltd., New Delhi 3 (1980).
[29] A. M. Shaikh, S. S. Bellad, B. K. Chougule, J. Magn. Magn. Mater., 195, 384 (1999).
[30] M. J. Iqbal, M. N. Ashiq, P. Hernandez-Gomez, J. M. Munoz, J. Magn. Magn. Mater., 320, 881 (2008).
[31] M. Anis-ur-Rehman, G. Asghar, J. Alloys and Compounds 509, 435 (2011).
[32] G. F. M. Pires Júnior, H. O. Rodrigues, J. S. Almeida, E. O. Sancho, J. C. Góes, M. M. Costa, J. C. Denardin, A. S. B. Sombra, J. Alloys and Compounds, 493, 326 (2010).
[33] M. N. Ashiq, M. J. Iqbal, I. H. Gul, J. Alloys and Compounds 487, 341 (2009).
[34] I. H. Gul, A. Maqsood, J. Alloys and Compounds, 465, 227 (2008).
[35] M. N. Ashiq, M. Javed Iqbal, I. Hussain Gul, J. Magn. Magn. Mater., 323, 259 (2011).
[36] R. Peelamedu, C. Grimes, D. Agrawal, R. Roy, J. Materials Research, 18, 2292 (2003).
[37] M. Javed Iqbal, M. Naeem Ashiq, I. Hussain Gul, J. Magn. Magn. Mater., 322, 1720 (2010).
[38] Manoj Kumar, K. L Yadav, Appl. Phys. Lett. 91, 242901, (2007).
[39] A. Molak, D. K. Mahato, A. Z. Szeremeta, Progress in Crystal Growth and Characterization of Materials, 64, 1 (2018).
[40] K. Uchino, S. Nomura, Ferroelectrics. Lett., 44, 55 (1982).
[41] W. Eerenstein, F. D. Morrison, J. Dho, M. G. Blamire, J. F. Scott, and N. D. Mathur, Science, 307, 1203 (2005).
[42] X. Qi, Appl. Phys. Lett., 86, 062903, (2005).
[43] M. K. Singh, H. M. jang, S. Ryu, M. H. Jo, Appl. Phys. Lett., 88, 42907 (2006).
[44] V R Reddy, Deepti Kothari, Sanjay Kumar Upadhyay, Ajay Gupta, N. Chauhan, and A. M. Awasthi, Ceramics International 40, 4247 (2014).
[45] Pabst, Gary W., Lane W. Martin, Ying-Hao Chu, and R. Ramesh, Appl. Phys. Lett., 90, 2902 (2007).
[46] Khan, A Mikael, P C Tim, and J B Andrew, Appl. Phys. Lett., 92, 072908, (2008).
[47] Lubomirsky, Igor, Juergen Fleig, and Joachim Maier, J. Appl. Phys., 92, 6819, (2002).
[48] Wang, Can, Mitsue Takahashi, Hidetoshi Fujino, Xia Zhao, EijiKume, Takeshi Horiuchi, and Shigeki Sakai, J. Appl. Phys., 99, 54104 (2006).
[49] R. G. Lerner, G. L. Trigg, Encyclopaedia of Physics (2nd Edition), (VHC publishers, 1991, ISBN (Verlagsgesellschaft)) 3-527-26954-1.
[50] Martin, Richard M., Electronic structure: basic theory and practical methods. (Cambrisdge university press, 2004).
[51] A. Altland and B. Simons, Condensed Matter Field Theory, (Cambridge University Press, 2010).
[52] Yun, Kwi Young, Minoru Noda, Masanori Okuyama, Hiromasa Saeki, Hitoshi Tabata, and Keisuke Saito, J. Appl. Phys., 96, 3399 (2004).
[53] Wang, Can, Mitsue Takahashi, Hidetoshi Fujino, Xia Zhao, EijiKume, Takeshi Horiuchi, and Shigeki Sakai, J. Appl. Phys., 99, 54104 (2006).
600 ATLANTIC AVE, BOSTON,
MA 02210, USA
+001-6179630233
AIS is an academia-oriented and non-commercial institute aiming at providing users with a way to quickly and easily get the academic and scientific information.
Copyright © 2014 - American Institute of Science except certain content provided by third parties.